? 2016 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 ? c to 150 ? c 650 v v dgr t j = 25 ? c to 150 ? c, r gs = 1m ? 650 v v gss continuous ? 30 v v gsm transient ? 40 v i d25 t c = 25 ? c 120 a i dm t c = 25 ? c, pulse width limited by t jm 240 a i a t c = 25 ? c15a e as t c = 25 ? c 3.5 j p d t c = 25 ? c 1250 w dv/dt i s ? i dm , v dd ? v dss , t j ? 150c 50 v/ns t j -55 ... +150 ? c t jm 150 ? c t stg -55 ... +150 ? c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c m d mounting torque (to-264p) 1.13/10 nm/lb.in f c mounting force (plus247) 20..120 /4.5..27 n/lb weight to-264p 10 g plus247 6 g symbol test conditions characteristic values (t j = 25 ? c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 650 v v gs(th) v ds = v gs , i d = 1ma 3.0 5.0 v i gss v gs = ? 30v, v ds = 0v ???????????????????? 200 na i dss v ds = v dss , v gs = 0v 25 ? a t j = 125 ? c 500 ??? a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 23 m ? IXTK120N65X2 ixtx120n65x2 v dss = 650v i d25 = 120a r ds(on) ? ? ? ? ? 23m ? ? ? ? ? ds100677b(03/16) features ? international standard packages ? low q g ? avalanche rated ? low package inductance advantages ? high power density ? easy to mount ? space savings applications ? switch-mode and resonant-mode ??? power supplies ? dc-dc converters ? pfc circuits ? ac and dc motor drives ? robotics and servo controls n-channel enhancement mode avalanche rated x2-class power mosfet preliminary technical information g = gate d = drain s = source tab = drain plus247 (ixtx) tab g d s to-264p (ixtk) s g d tab
ixys reserves the right to change limits, test conditions, and dimensions. IXTK120N65X2 ixtx120n65x2 note 1. pulse test, t ? 300 ? s, duty cycle, d ?? 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. i s v gs = 0v 120 a i sm repetitive, pulse width limited by t jm 480 a v sd i f = i s , v gs = 0v, note 1 1.4 v t rr 505 ns q rm 15 ? c i rm 58 a i f = 60a, -di/dt = 100a/ ? s v r = 100v, v gs = 0v symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 66 110 s r gi gate input resistance 0.77 ? c iss 13.6 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 9500 pf c rss 8.9 pf c o(er) 425 pf c o(tr) 1960 pf t d(on) 32 ns t r 24 ns t d(off) 87 ns t f 10 ns q g(on) 230 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 74 nc q gd 65 nc r thjc 0.10 ?? c/w r thcs 0.15 ????????????????? c/w resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 ?? (external) effective output capacitance energy related time related v gs = 0v v ds = 0.8 ? v dss preliminary technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. terminals: 1 - gate 2,4 - drain 3 - source plus247 tm outline to-264p outline terminals: 1 = gate 2,4 = drain 3 = source 4 c a b d r q a e d1 r1 l1 q1 e1 b1 e b2 x2 1 2 3 d2 a2 r b c a a1 d2 e1 b2 2 plcs 3 plcs e l1 b4 2 plcs d1 d 4 q e 1 2 3
? 2016 ixys corporation, all rights reserved IXTK120N65X2 ixtx120n65x2 fig. 4. r ds(on) normalized to i d = 60a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 120a i d = 60a fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 0 0.5 1 1.5 2 2.5 v ds - volts i d - amperes v gs = 10v 8v 6v 7v 5v fig. 2. extended output characteristics @ t j = 25oc 0 40 80 120 160 200 240 280 0 2 4 6 8 101214161820 v ds - volts i d - amperes v gs = 10v 6v 7v 5v 8v fig. 3. output characteristics @ t j = 125oc 0 20 40 60 80 100 120 0123456 v ds - volts i d - amperes v gs = 10v 7v 5v 6v 4v fig. 6. normalized breakdown & threshold voltages vs. junction temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -60 -40 -20 0 20 40 60 80 100 120 140 160 t j - degrees centigrade bv dss / v gs(th) - normalized bv dss v gs(th) fig. 5. r ds(on) normalized to i d = 60a value vs. drain current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 40 80 120 160 200 240 280 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc
ixys reserves the right to change limits, test conditions, and dimensions. IXTK120N65X2 ixtx120n65x2 fig. 11. gate charge 0 2 4 6 8 10 0 40 80 120 160 200 240 q g - nanocoulombs v gs - volts v ds = 325v i d = 60a i g = 10ma fig. 12. capacitance 1 10 100 1,000 10,000 100,000 1 10 100 1000 v ds - volts capacitance - picofarad s f = 1 mh z c iss c rss c oss fig. 7. maximum drain current vs. case temperature 0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 8. input admittance 0 20 40 60 80 100 120 140 160 180 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 9. transconductance 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 v sd - volts i s - amperes t j = 125oc t j = 25oc
? 2016 ixys corporation, all rights reserved IXTK120N65X2 ixtx120n65x2 ixys ref: t_120n65x2(x9-s602) 1-06-16 fig. 15. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - k / w fig. 15. maximum transient thermal impedance aaaaa 0.3 fig. 14. forward-bias safe operating area 0.1 1 10 100 1000 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 100s r ds( on ) limi t 1ms 10ms fig. 13. output capacitance stored energy 0 10 20 30 40 50 60 70 80 90 0 100 200 300 400 500 600 v ds - volts e oss - microjoules
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